| Part Number | MSC81250M Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle und.
C)
600 17.8 55 250 * 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.20 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81250M ELECTRICAL SPECIFICAT. |
MSC81250M Datasheet and Specifications PDF
The MSC81250M is a RF & MICROWAVE TRANSISTORS.
| Part Number | MSC81250M Datasheet |
|---|---|
| Description | NPN SILICON RF POWER TRANSISTOR |
| Manufacturer | Advanced Semiconductor |
| Overview |
The ASI MSC81250M is Designed for DME/TACAN Applications up to 1150 MHz.
PACKAGE STYLE .400 2NL FLG
1
2X B C F Ø D 4 x .0 6 2 x 4 5 ° A .0 2 5 x 4 5 °
2 3
G H I J K
E
FEATURES:
• Internal Input/O.
* Internal Input/Output Matching Networks * PG = 6.2 dB at 250 W/1150 MHz * Omnigold™ Metalization System L P M D IM A B M IN IM U M in c h e s / m m N M A X IM U M in c h e s / m m .0 2 0 / 0 .5 1 .1 0 0 / 2 .5 4 .3 7 6 / 9 .5 5 .1 1 0 / 2 .7 9 .3 9 5 / 1 0 .0 3 .1 9 3 / 4 .9 0 .4 5 0 / 1 1 .. |
| Part Number | MSC81250M Datasheet |
|---|---|
| Description | RF & MICROWAVE TRANSISTORS |
| Manufacturer | STMicroelectronics |
| Overview |
The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle und.
)
600 17.8 55 250 * 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.20 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81250M ELECTRICAL SPECIFICATI. |