Click to expand full text
Silicon Switching Diodes
1N4150, 1N4150-1 & 1N3600
Features
• Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction
Maximum Ratings
Operating & Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ TA = +25°C
Derating: 2.0 mA dc/°C Above TL = + 75°C @ L = 3/8”
Surge Current A:
2A (pk) tp = 8.3 mS, VRM = 0
Surge Current B:
4A (pk) tp = 1 us, VRM = 0
Electrical Specifications @ +25 ºC (Unless Otherwise Specified)
TYPE Number
1N3600 1N4150, -1
VBR
IR = 10 μA V dc 75 75
VRWM
V (pk) 50 50
IR1 VR = 50 Vdc TA = 25 °C
μA dc
0.1 0.1
IR2 VR = 50 Vdc TA =150°C
μA dc
100 100
Forward Voltage Limits - All Types
C IR = 0; f = 1 MHz ac signal = 50 mV (p-P)
pF 2.5 2.