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• 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION
1N4150 and 1N4150-1 and 1N3600
MAXIMUM RATINGS
Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2.0 mA dc/°C Above TL = + 75°C @ L = 3/8” Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s)
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
Type V BR V RWM I R1 VR = 50 V dc IR = 10 µA V dc 1N3600 1N4150,-1 75 75 V (pk) 50 50 TA = 25°C µA dc 0.1 0.1 1 R2 VR = 50 V dc TA = 150°C µA dc 100 100 C VR = 0; f = 1 Mhz; ac signals = 50 mV (p-p) pF 2.5 2.
1N4150-1 Datasheet
