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HSCH-9162 Datasheet GaAs Detector Diode

Manufacturer: Agilent Technologies

Download the HSCH-9162 datasheet PDF. This datasheet also includes the HSCH-9161 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HSCH-9161-Agilent.pdf) that lists specifications for multiple related part numbers.

General Description

The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode (MBID) process.

Applications This diode is suitable for medium– low barrier, zero bias detector applications.The HSCH916x is functional through W–band (110 GHz) and can be mounted in microstrip, finline, and coplanar circuits.

Assembly Techniques Diodes are ESD sensitive.

Overview

HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet.

Key Features

  • Low Junction Capacitance.
  • fc >200 GHz.
  • Lower Temperature Coefficient than Silicon.
  • Durable Construction.
  • Typical 6 gram beam lead strength.
  • High power handling capability 231 120 (9.1) (4.7) Note: All dimensions in microns (mils) Beam Lead = 7-9 um Die Thickness.