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2SD1006 Datasheet

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AiT Semiconductor · 2SD1006 File Size : 221.52KB · 4 hits

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C 0.7 A Collector Current(pulse)* IC(pu) 1.2 A Collector I Power Dissipation** PC 2 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at .

2SD1006 2SD1006 2SD1006
TAGS
NPN
SILICONEPITAXIAL
TRANSISTORS
2SD1000
2SD1001
2SD1005
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