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SMD Type
NPN Silicon Epitaxial Transistor 2SD1006
Transistors
Features
High collector to emitter voltage: VCEO 100V.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector l power dissipation Junction temperature Storage temperature *. PW 10ms,duty cycle 50% Symbol VCBO VCEO VEBO IC IC(pu) Pc Tj Tstg Rating 100 100 5 0.7 1.2 2 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Base-emitter voltage * Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Output capacitance Transition product *.
2SD1006 Datasheet