| Part Number | 2SD1006 Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type NPN Silicon Epitaxial Transistor 2SD1006 Transistors Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emit. High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector l power dissipation Junction temperature Storage temperature *. PW 10ms,duty cycle 5. |
2SD1006 Datasheet and Specifications PDF
The 2SD1006 is a NPN Silicon Epitaxial Transistor.
| Part Number | 2SD1006 Datasheet |
|---|---|
| Description | NPN SILICONEPITAXIAL TRANSISTORS |
| Manufacturer | AiT Semiconductor |
| Overview | The 2SD1006 is available in SOT89-3 package MACHANICAL DATA Case: SOT89-3 High collector to emitter voltage: VCEO>100V Audio Frequency Power Amplifier Application Complement to PNP type 2SB8. C 0.7 A Collector Current(pulse)* IC(pu) 1.2 A Collector I Power Dissipation** PC 2 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at . |
| Part Number | 2SD1006 Datasheet |
|---|---|
| Description | NPN TRANSISTOR |
| Manufacturer | NEC |
| Overview |
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these cir.
* NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommen. |