The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SMD Type
NPN Silicon Epitaxial Transistor 2SD1007
Transistors
Features
High collector to emitter voltage: VCEO 120V.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector power dissipation Junction temperature Storage temperature *. PW 10ms,duty cycle 50% Symbol VCBO VCEO VEBO IC IC (pu) Pc Tj Tstg Rating 120 120 5 0.7 1.2 2 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Base-emitter voltage * Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Output capacitance Transition frequency *.
2SD1007 Datasheet