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2SD1007 Datasheet PDF

Kexin Electronics 2SD1007

NPN Silicon Epitaxial Transistor

Part No. 2SD1007
Datasheet 2SD1007 Download
Manufacturer Kexin Electronics
Description NPN Silicon Epitaxial Transistor
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2SD1007 datasheet page 1 preview

FEATURES

High collector to emitter voltage: VCEO 120V.

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector power dissipation Junction temperature Storage temperature *. PW 10ms,duty cycle 50% Symbol VCBO VCEO VEBO IC IC (pu) Pc Tj Tstg Rating 120 120 5 0.7 1.2 2 150 -55 to +150 Unit V V V A A W

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Base-emitter voltage * Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Output capacitance Transition frequency *. PW 350ìs,duty cycle 2% Symbol VBE ICBO IEBO hFE Testconditons VCE =10V , IC = 10mA VCB = 120V, IE=0 VEB = 5V, IC=0 VCE =1V , IC = 5.0mA VCE =1V , IC = 100mA VCE(sat) IC = 500mA , IB = 50mA VBE(sat) IC = 500mA , IB = 50mA Cob fT VCB = 10V , IE = 0 , f = 1.0MHz VCE = 10V , IE = -10mA 45 90 200 200 0.3 0.9 10 90 400 0.6 1.5 V V pF MHz Min...