| Part Number | 2SD1007 Datasheet |
|---|---|
| Manufacturer | AiT Semiconductor |
| Overview |
The 2SD1007 is available in SOT-89 package
FEATURES
High collector emitter voltage: VCEO>120V Available in SOT-89 package
ORDERING INFORMATION
Package Type
Part Number
SOT-89 SPQ: 1,000/Reel
.
* High collector emitter voltage: VCEO>120V * Available in SOT-89 package ORDERING INFORMATION Package Type Part Number SOT-89 SPQ: 1,000/Reel 2SD1007-R 2SD1007-Q 2SD1007-P 2SD1007-R = 90~180 hFE 2SD1007-Q = 135~270 2SD1007-P = 200~400 AiT provides all RoHS Compliant Products PIN DESCRIPT. |
2SD1007 Datasheet and Specifications PDF
The 2SD1007 is a GENERAL PURPOSE NPN TRANSISTORS.
| Part Number | 2SD1007 Datasheet |
|---|---|
| Description | NPN SILICON EPITAXIAL TRANSISTOR |
| Manufacturer | NEC |
| Overview |
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these cir.
* NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommen. |
| Part Number | 2SD1007 Datasheet |
|---|---|
| Description | NPN Silicon Epitaxial Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type NPN Silicon Epitaxial Transistor 2SD1007 Transistors Features High collector to emitter voltage: VCEO 120V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emit. High collector to emitter voltage: VCEO 120V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector power dissipation Junction temperature Storage temperature *. PW 10ms,duty cycle 50%. |