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2SD1005 - NPN Silicon Epitaxial Transistor

Key Features

  • World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse).
  • Total power dissipation at 25 ambient temperature.
  • Tj Tstg 150 -55 to +150 Symbol VCBO VCEO VEBO IC IC PT Rating 100 80 5 1 1.5 2 Unit V V V A A W Junction temperature Storage.

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SMD Type NPN Silicon Epitaxia 2SD1005 Transistors Features World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Total power dissipation at 25 ambient temperature * Tj Tstg 150 -55 to +150 Symbol VCBO VCEO VEBO IC IC PT Rating 100 80 5 1 1.5 2 Unit V V V A A W Junction temperature Storage temperature *1. PW 10ìs,duty cycle 50% *2. When mounted on ceramic substrate of 16cm2 X 0.