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2SD1005 - NPN SILICON EPITAXIAL TRANSISTOR

Key Features

  • High Collector to Base Voltage.
  • Excellent DC Current Gain Linearity.
  • Complements to PNP type 2SB804. Pb Lead-free Production specification 2SD1005.

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NPN SILICON EPITAXIAL TRANSISTOR FEATURES  High Collector to Base Voltage.  Excellent DC Current Gain Linearity.  Complements to PNP type 2SB804. Pb Lead-free Production specification 2SD1005 ORDERING INFORMATION Type No. Marking 2SD1005 BW/BV/BU SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature 100 80 5 1 500 150 -55 to +150 V V V A mW ℃ ℃ E056 Rev.A www.gmesemi.