2SD1005
2SD1005 is manufactured by Galaxy Microelectronics.
NPN SILICON EPITAXIAL TRANSISTOR
Features
- High Collector to Base Voltage.
- Excellent DC Current Gain Linearity.
- plements to PNP type 2SB804.
Pb
Lead-free
Production specification
ORDERING INFORMATION
Type No.
Marking
BW/BV/BU
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO VCEO VEBO IC PC Tj Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature
100 80 5 1 500 150 -55 to +150
V V V A mW ℃ ℃
E056 Rev.A
.gmesemi.
Production specification
NPN SILICON EPITAXIAL...
