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2SD1001 - NPN Silicon Epitaxial Transistor

Key Features

  • World standard miniature package:SOT-89. High collector-emitter voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse).
  • Total power dissipation Junction temperature Storage temperature.
  • Pulse Test PW 10ms, Duty Cycle 50%. Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating 80 80 5 300 500 2.0 150 -55 to +150 Unit V V V mA mA W Electrical Characteristics Ta = 25 Parameter Coll.

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SMD Type NPN Silicon Epitaxial Transistor 2SD1001 Transistors Features World standard miniature package:SOT-89. High collector-emitter voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse) * Total power dissipation Junction temperature Storage temperature * Pulse Test PW 10ms, Duty Cycle 50%. Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating 80 80 5 300 500 2.