AM2300 Description
FEATURES The AM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance.
AM2300 Key Features
- 20V/4.0A, RDS(ON) =26mΩ(typ.)@VGS =4.5V
- 20V/3.0A, RDS(ON) =31mΩ(typ.)@VGS =2.5V
- 20V/2.0A, RDS(ON) =44mΩ(typ.)@VGS =1.8V
- Super high density cell design for extremely low
- Exceptional on-resistance and Maximum DC
- Available in SOT-23 Package