AM2305 - MOSFET -30V P-CHANNEL ENHANCEMENT MODE

Product Overview

AiT Semiconductor

Part number	AM2305
Manufacturer	AiT Semiconductor
File Size	577.29 KB
Description	MOSFET -30V P-CHANNEL ENHANCEMENT MODE
Datasheet	AM2305 Datasheet
Additional preview pages of the AM2305 datasheet.

The AM2305 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

-30V/-4A, RDS(ON) = 55mΩ@VGS = -10V -30V/-3A, RDS(ON) = 64mΩ@VGS = -4.5V -30V/-2A, RDS(ON) = 85mΩ@VGS = -2.5V Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and Maximum DC current capability.
Available in a SOT-23 package. These devices are particularly suited for low voltage.

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Published: May 14, 2012 |