AM2305 mode equivalent, mosfet -30v p-channel enhancement mode.
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* -30V/-4A, RDS(ON) = 55mΩ@VGS = -10V -30V/-3A, RDS(ON) = 64mΩ@VGS = -4.5V -30V/-2A, RDS(ON) = 85mΩ@VGS = -2.5V Super high density cell design for e.
devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully a.
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