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AFN2918W - N-Channel Enhancement Mode MOSFET

Product Overview

Alfa-MOS

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AFN2918W N-Channel Enhancement Mode MOSFET by Alfa-MOS - Datasheet Preview — Datasheet preview – AFN2918W

Datasheet Details

Part number	AFN2918W
Manufacturer	Alfa-MOS
File Size	583.33 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN2918W Datasheet
Note	This datasheet PDF includes multiple part numbers: AFN2918W, AFN2918W-Alfa. Please refer to the document for exact specifications by model.
Additional preview pages of the AFN2918W datasheet.

Product details

Description

AFN2918W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

30V/4.0A,RDS(ON)=50mΩ@VGS=10V.
30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V.
30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V.
30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
DFN2X2-6L package design.

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Published: Nov 22, 2018 |