AFN2918W Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Download the AFN2918W datasheet PDF. This datasheet also includes the AFN2918W-Alfa variant, as both parts are published together in a single manufacturer document.

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AFN2918W n-channel enhancement mode mosfet by Alfa-MOS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AFN2918W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AFN2918W
Manufacturer	Alfa-MOS
File Size	583.33 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN2918W Datasheet

General Description

AFN2918W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Description ( DFN2X2-6L )

Overview

Alfa-MOS Technology AFN2918W 30V N-Channel Enhancement Mode MOSFET.

Key Features

30V/4.0A,RDS(ON)=50mΩ@VGS=10V.
30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V.
30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V.
30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
DFN2X2-6L package design.

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