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AFN2918W - N-Channel Enhancement Mode MOSFET

Download the AFN2918W datasheet PDF. This datasheet also covers the AFN2918W-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN2918W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 30V/4.0A,RDS(ON)=50mΩ@VGS=10V.
  • 30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V.
  • 30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V.
  • 30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN2X2-6L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN2918W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN2918W
Manufacturer Alfa-MOS
File Size 583.33 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN2918W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFN2918W 30V N-Channel Enhancement Mode MOSFET General Description AFN2918W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) Features  30V/4.0A,RDS(ON)=50mΩ@VGS=10V  30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V  30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V  30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  DFN2X2-6L package design Application  Load Switch with Low Voltage Drop  Load Switch for 1.2 V/1.5 V/1.