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AFN2918W Datasheet Preview

AFN2918W Datasheet

N-Channel Enhancement Mode MOSFET

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Alfa-MOS
Technology
AFN2918W
30V N-Channel
Enhancement Mode MOSFET
General Description
AFN2918W, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( DFN2X2-6L )
Features
30V/4.0A,RDS(ON)=50mΩ@VGS=10V
30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V
30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V
30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
DFN2X2-6L package design
Application
Load Switch with Low Voltage Drop
Load Switch for 1.2 V/1.5 V/1.8 V Power Lines
Smart Phones, Tablet PCs, Portable Media Players
Pin Define
Pin
1
2
3
4
5
6
Symbol
S1
G1
D2
S2
G2
D1
Description
Source1
Gate1
Drain2
Source2
Gate2
Drain1
Ordering Information
Part Ordering No.
Part Marking
Package
AFN2918WFN226RG
W18YW
DFN2X2-6L
W18 parts code
Y
year code
W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
AFN2918WFN226RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A April 2018
Unit
Tape & Reel
Quantity
4000 EA
www.alfa-mos.com
Page 1




Alfa-MOS

AFN2918W Datasheet Preview

AFN2918W Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

Alfa-MOS
Technology
AFN2918W
30V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case(Drian)
TC=25
TC=70
TA=25
TA=70
TC=25
TC=70
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
RθJc
Typical
30
±12
4.5
4.5
4.4
3.5
15
1.6
7.8
5.0
150
-55/150
52
12.5
Unit
V
V
A
A
A
W
/W
Electrical Characteristics
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A April 2018
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=85
VDS5V,VGS=4.5V
VGS=10V ,ID=4.0A
VGS=4.5V,ID=3.0A
VGS=2.5V,ID=2.5A
VGS=1.8V,ID=1.0A
VDS=15V,ID=3.0A
IS=2.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=4.5V
ID10A
VDS=15V,VGS=0V
f=1MHz
VDD=15V,RL=5Ω
ID3.0A,VGEN=4.5V
RG=1Ω
Min. Typ Max. Unit
30
0.6
1.0 V
±100 nA
1
uA
30
30 A
36 50
40
49
56
64
mΩ
61 76
15 S
0.8 1.2 V
3.6 5.5
0.5 nC
0.5
320
45 pF
20
5 10
30
30
60
60
ns
40 80
www.alfa-mos.com
Page 2



Part Number AFN2918W
Description N-Channel Enhancement Mode MOSFET
Maker Alfa-MOS
Total Page 6 Pages
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