AFN2918W
Description
AFN2918W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Key Features
- 30V/4.0A,RDS(ON)=50mΩ@VGS=10V
- 30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V
- 30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V
- 30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- DFN2X2-6L package design
