AFN2912W Datasheet | Alfa-MOS

Description AFN2912W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) 20V N-Channel Enhancement Mode MOSFET Features z 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V z 20V/3.6A,RDS(ON)=48mΩ@VGS=2.5V z 20V/2.4A,RDS(ON)=68mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design Application z Power Management in Note book z LED Display z DC-DC System z LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source1 Gate1 Drain2 Source2 Gate2 Drain1 Ordering Information Part Ordering No. Part Marking Package AFN2912WFN226RG W12YW DFN2X2-6L ※ Y year code ※ W week code ※ AFN2912WFN226RG : 7” Tape & Reel ; Pb- Free ; Halogen -...