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AFN2912W - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2912W, a member of the AFN2912W-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN2912W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V z 20V/3.6A,RDS(ON)=48mΩ@VGS=2.5V z 20V/2.4A,RDS(ON)=68mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design.

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Datasheet Details

Part number AFN2912W
Manufacturer Alfa-MOS
File Size 413.94 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN2912W Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN2912W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) AFN2912W 20V N-Channel Enhancement Mode MOSFET Features z 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V z 20V/3.6A,RDS(ON)=48mΩ@VGS=2.5V z 20V/2.4A,RDS(ON)=68mΩ@VGS=1.
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