AFN2014 - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2014, a member of the AFN2014-Alfa N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFN2014
Manufacturer	Alfa-MOS
File Size	834.71 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN2014 Datasheet
Additional preview pages of the AFN2014 datasheet.

AFN2014 Product details

Description

AFN2014, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

20V/ 10A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 8A,RDS(ON)=17mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=21mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Published: Dec 6, 2018 |