Alfa-MOS AFN2014
N-Channel Enhancement Mode MOSFET
| Part No. | AFN2014 |
|---|---|
| Datasheet | AFN2014 Download |
| Manufacturer |  Alfa-MOS |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN2014, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( TO-252-2L ) AFN2014 20V N-Channel Enhancement Mode MOSFETFEATURES
20V/ 10A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 8A,RDS(ON)=17mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=21mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Management in Desktop Computer DC/DC Converter LCD Display inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN2014T252RG 2014 TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN2014T252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Nov. 2010DESCRIPTION
Gate Source Drain Unit Tape
