AFN2306AE - N-Channel MOSFET

This page provides the datasheet information for the AFN2306AE, a member of the AFN2306AE-Alfa N-Channel MOSFET family.

Product Overview

Alfa-MOS

Part number	AFN2306AE
Manufacturer	Alfa-MOS
File Size	721.20 KB
Description	N-Channel MOSFET
Datasheet	AFN2306AE Datasheet
Additional preview pages of the AFN2306AE datasheet.

AFN2306AE, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=750mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-23 package design.

Other Datasheets by Alfa-MOS

Published: Nov 29, 2018 |