Datasheet4U.com

AFN2312A - 20V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2312A, a member of the AFN2312A-Alfa 20V N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

📥 Download Datasheet

AFN2312A 20V N-Channel Enhancement Mode MOSFET by Alfa-MOS - Datasheet Preview — Datasheet preview – AFN2312A

Datasheet Details

Part number	AFN2312A
Manufacturer	Alfa-MOS
File Size	700.43 KB
Description	20V N-Channel Enhancement Mode MOSFET
Datasheet	AFN2312A Datasheet
Additional preview pages of the AFN2312A datasheet.

AFN2312A Product details

Description

AFN2312A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

ID=4.0A,RDS(ON)=25mΩ@VGS=4.5V.
ID=3.0A,RDS(ON)=34mΩ@VGS=2.5V.
ID=2.0A,RDS(ON)=50mΩ@VGS=1.8V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
SOT-23 package design.

📁 Similar Datasheet

AFN2308AS23RG - N-Channel 60V MOSFET (VBsemi)
AFND1208U1 - 512Mbit (64M x 8-Bit)NAND FLASH (ATO)
AFND1G08U3 - 1G-bit NAND FLASH (ATO)

Other Datasheets by Alfa-MOS

AFN2316A - N-Channel MOSFET
AFN2318A - N-Channel MOSFET
AFN2302AS - N-Channel MOSFET
AFN2304AS - N-Channel MOSFET
AFN2306A - N-Channel MOSFET
AFN2306AE - N-Channel MOSFET
AFN2308A - 60V N-Channel MOSFET
AFN2324A - 100V N-Channel Enhancement Mode MOSFET

Published: Nov 29, 2018 |