AFN2312A - 20V N-Channel Enhancement Mode MOSFET

Alfa-MOS

Download the AFN2312A datasheet PDF. This datasheet also covers the AFN2312A-Alfa variant, as both devices belong to the same 20v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN2312A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

ID=4.0A,RDS(ON)=25mΩ@VGS=4.5V.
ID=3.0A,RDS(ON)=34mΩ@VGS=2.5V.
ID=2.0A,RDS(ON)=50mΩ@VGS=1.8V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
SOT-23 package design.

📥 Download Datasheet

AFN2312A 20v n-channel enhancement mode mosfet by Alfa-MOS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AFN2312A-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AFN2312A
Manufacturer	Alfa-MOS
File Size	700.43 KB
Description	20V N-Channel Enhancement Mode MOSFET
Datasheet	AFN2312A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
AFN2308AS23RG	N-Channel 60V MOSFET	VBsemi
AFND1208U1	512Mbit (64M x 8-Bit)NAND FLASH	ATO
AFND1G08U3	1G-bit NAND FLASH	ATO

Other Datasheets by Alfa-MOS

Part Number	Description
AFN2316A	N-Channel MOSFET
AFN2318A	N-Channel MOSFET
AFN2302AS	N-Channel MOSFET
AFN2304AS	N-Channel MOSFET
AFN2306A	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Alfa-MOS Technology General Description AFN2312A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFN2312A 20V N-Channel Enhancement Mode MOSFET Features  ID=4.0A,RDS(ON)=25mΩ@VGS=4.5V  ID=3.0A,RDS(ON)=34mΩ@VGS=2.5V  ID=2.0A,RDS(ON)=50mΩ@VGS=1.