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AFN2312A Datasheet 20v N-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN2312A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( SOT-23 ) AFN2312A 20V N-Channel Enhancement Mode MOSFET

Key Features

  • ID=4.0A,RDS(ON)=25mΩ@VGS=4.5V.
  • ID=3.0A,RDS(ON)=34mΩ@VGS=2.5V.
  • ID=2.0A,RDS(ON)=50mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design.

More Datasheets from Alfa-MOS

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AFN2312A Distributor