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AFN2306A Datasheet N-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN2306A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( SOT-23 ) AFN2306A 20V N-Channel Enhancement Mode MOSFET

Key Features

  • 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=750mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design.

More Datasheets from Alfa-MOS

Part Number Description
AFN2306AE N-Channel MOSFET
AFN2302AS N-Channel MOSFET
AFN2304AS N-Channel MOSFET
AFN2308A 60V N-Channel MOSFET
AFN2312A 20V N-Channel Enhancement Mode MOSFET
AFN2316A N-Channel MOSFET
AFN2318A N-Channel MOSFET
AFN2324A 100V N-Channel Enhancement Mode MOSFET
AFN2324BA 110V N-Channel Enhancement Mode MOSFET
AFN2326BS N-Channel Enhancement Mode MOSFET

AFN2306A Distributor