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AFN2918W - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2918W, a member of the AFN2918W-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN2918W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/4.0A,RDS(ON)=50mΩ@VGS=10V.
  • 30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V.
  • 30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V.
  • 30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN2X2-6L package design.

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Datasheet Details

Part number AFN2918W
Manufacturer Alfa-MOS
File Size 583.33 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN2918W Datasheet
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Alfa-MOS Technology AFN2918W 30V N-Channel Enhancement Mode MOSFET General Description AFN2918W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) Features  30V/4.0A,RDS(ON)=50mΩ@VGS=10V  30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V  30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V  30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  DFN2X2-6L package design Application  Load Switch with Low Voltage Drop  Load Switch for 1.2 V/1.5 V/1.
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