AFN2918W Datasheet | Alfa-MOS

Description AFN2918W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) Features - 30V/4.0A,RDS(ON)=50mΩ@VGS=10V - 30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V - 30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V - 30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - DFN2X2-6L package design Application - Load Switch with Low Voltage Drop - Load Switch for 1.2 V/1.5 V/1.8 V Power Lines - Smart Phones, Tablet PCs, Portable Media Players Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source1 Gate1 Drain2 Source2 Gate2 Drain1 Ordering...