AFN2918W Description
AFN2918W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN2X2-6L.
AFN2918W Key Features
- 30V/4.0A,RDS(ON)=50mΩ@VGS=10V
- 30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V
- 30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V
- 30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current
- DFN2X2-6L package design
- Load Switch with Low Voltage Drop
- Load Switch for 1.2 V/1.5 V/1.8 V Power Lines
- Smart Phones, Tablet PCs, Portable Media Players