AFN2922W Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Download the AFN2922W datasheet PDF. This datasheet also includes the AFN2922W-Alfa variant, as both parts are published together in a single manufacturer document.

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AFN2922W n-channel enhancement mode mosfet by Alfa-MOS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AFN2922W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AFN2922W
Manufacturer	Alfa-MOS
File Size	430.97 KB
Description	N-Channel Enhancement Mode MOSFET
Download	AFN2922W Download (PDF)

General Description

AFN2922W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Description ( DFN2X2-6L ) AFN2922W 20V N-Channel Enhancement Mode MOSFET

Overview

Alfa-MOS Technology General.

Key Features

z 20V/4.6A,RDS(ON)=25mΩ@VGS=4.5V z 20V/4.2A,RDS(ON)=30mΩ@VGS=2.5V z 20V/3.8A,RDS(ON)=38mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design.

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