AFN2920W Datasheet | Alfa-MOS

Description AFN2920W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) 20V N-Channel Enhancement Mode MOSFET Features z 20V/5.0A,RDS(ON)=19mΩ@VGS=4.5V z 20V/4.6A,RDS(ON)=23mΩ@VGS=2.5V z 20V/4.2A,RDS(ON)=34mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z ESD protection z DFN2X2-6L package design Application z Load Switch with Low Voltage Drop z Load Switch for 1.2 V/1.5 V/1.8 V Power Lines z Smart Phones, Tablet PCs, Portable Media Players Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source1 Gate1 Drain2 Source2 Gate2 Drain1 Ordering Information Part Ordering No. Part...