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AFN2920W - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2920W, a member of the AFN2920W-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN2920W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 20V/5.0A,RDS(ON)=19mΩ@VGS=4.5V z 20V/4.6A,RDS(ON)=23mΩ@VGS=2.5V z 20V/4.2A,RDS(ON)=34mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z ESD protection z DFN2X2-6L package design.

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Datasheet Details

Part number AFN2920W
Manufacturer Alfa-MOS
File Size 434.25 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN2920W Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN2920W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) AFN2920W 20V N-Channel Enhancement Mode MOSFET Features z 20V/5.0A,RDS(ON)=19mΩ@VGS=4.5V z 20V/4.6A,RDS(ON)=23mΩ@VGS=2.5V z 20V/4.2A,RDS(ON)=34mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z ESD protection z DFN2X2-6L package design Application z Load Switch with Low Voltage Drop z Load Switch for 1.2 V/1.5 V/1.
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