AFN3414A mosfet equivalent, 20v n-channel mosfet.
* ID=3.8A,RDS(ON)=55mΩ@VGS=4.5V
* ID=2.8A,RDS(ON)=65mΩ@VGS=2.5V
* ID=1.8A,RDS(ON)=85mΩ@VGS=1.8V
* Super high density cell design for extremely
low RDS (ON.
Pin Description ( SOT-23 )
AFN3414A
20V N-Channel Enhancement Mode MOSFET
Features
* ID=3.8A,RDS(ON)=55mΩ@VGS=4.5V.
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