AFN3416 - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN3416, a member of the AFN3416-Alfa N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

Part number	AFN3416
Manufacturer	Alfa-MOS
File Size	554.35 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN3416 Datasheet
Additional preview pages of the AFN3416 datasheet.

AFN3416, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=30mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=36mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

Other Datasheets by Alfa-MOS

Published: Dec 11, 2018 |