AFN3416 Datasheet | Alfa-MOS

Description AFN3416, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-3L ) 20V N-Channel Enhancement Mode MOSFET Features 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=30mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=36mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN3416S23RG 16YW SOT-23-3L ϡʳ 16 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week...