AFN3414A - 20V N-Channel MOSFET

Alfa-MOS

Download the AFN3414A datasheet PDF. This datasheet also covers the AFN3414A-Alfa variant, as both devices belong to the same 20v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN3414A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

ID=3.8A,RDS(ON)=55mΩ@VGS=4.5V.
ID=2.8A,RDS(ON)=65mΩ@VGS=2.5V.
ID=1.8A,RDS(ON)=85mΩ@VGS=1.8V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
SOT-23 package design.

📥 Download Datasheet

AFN3414A 20v n-channel mosfet by Alfa-MOS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AFN3414A-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AFN3414A
Manufacturer	Alfa-MOS
File Size	400.83 KB
Description	20V N-Channel MOSFET
Datasheet	AFN3414A Datasheet

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Other Datasheets by Alfa-MOS

Part Number	Description
AFN3414AS	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Alfa-MOS Technology General Description AFN3414A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFN3414A 20V N-Channel Enhancement Mode MOSFET Features  ID=3.8A,RDS(ON)=55mΩ@VGS=4.5V  ID=2.8A,RDS(ON)=65mΩ@VGS=2.5V  ID=1.8A,RDS(ON)=85mΩ@VGS=1.