AFN4240S Datasheet | Alfa-MOS

Alfa-MOS Technology 40V N-Channel Enhancement Mode MOSFET General Description AFN4240S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Features 40V/30A,RDS(ON)= 3.3mΩ@VGS=10V 40V/20A,RDS(ON)= 4.3mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Pin Description ( TO-220-3L ) Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part...