AFN4240S mosfet equivalent, n-channel enhancement mode mosfet.
40V/30A,RDS(ON)= 3.3mΩ@VGS=10V 40V/20A,RDS(ON)= 4.3mΩ@VGS=4.5V Super high density cell design for extremely low RDS
(ON)
TO-220-3L package design
Pin Description ( TO-22.
Features
40V/30A,RDS(ON)= 3.3mΩ@VGS=10V 40V/20A,RDS(ON)= 4.3mΩ@VGS=4.5V Super high density cell design for extremely l.
Image gallery
Download