AFN7412 Datasheet, Alfa-MOS

20V/3.8A,RDS(ON)=52mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=56mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=68mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resi.

Pin Description ( SOT-323 ) AFN7412 20V N-Channel Enhancement Mode MOSFET Features 20V/3.8A,RDS(ON)=52mΩ@VGS=4.5V 20V/.