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AFN7424S - N-Channel MOSFET

This page provides the datasheet information for the AFN7424S, a member of the AFN7424S-Alfa N-Channel MOSFET family.

Description

AFN7424S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 30V/20A,RDS(ON)=4.5mΩ@VGS=10V 30V/15A,RDS(ON)=6.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.3-8L package design.

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Datasheet preview – AFN7424S

Datasheet Details

Part number AFN7424S
Manufacturer Alfa-MOS
File Size 503.52 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN7424S Datasheet
Additional preview pages of the AFN7424S datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN7424S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFN7424S 30V N-Channel Enhancement Mode MOSFET Features 30V/20A,RDS(ON)=4.5mΩ@VGS=10V 30V/15A,RDS(ON)=6.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.
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