AFN7426S - N-Channel MOSFET

This page provides the datasheet information for the AFN7426S, a member of the AFN7426S-Alfa N-Channel MOSFET family.

Description

AFN7426S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

30V/20A,RDS(ON)=4.5mΩ@VGS=10V 30V/15A,RDS(ON)=5.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3X3-8L package design.

Alfa-MOS

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Datasheet Details

Part number	AFN7426S
Manufacturer	Alfa-MOS
File Size	452.53 KB
Description	N-Channel MOSFET
Datasheet	AFN7426S Datasheet
Additional preview pages of the AFN7426S datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN7426S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFN7426S 30V N-Channel Enhancement Mode MOSFET Features 30V/20A,RDS(ON)=4.5mΩ@VGS=10V 30V/15A,RDS(ON)=5.5mΩ@VGS=4.

Published: Nov 24, 2018 |