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AFN7412 Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Download the AFN7412 datasheet PDF. This datasheet also includes the AFN7412-Alfa variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN7412-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN7412
Manufacturer Alfa-MOS
File Size 553.29 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN7412 Datasheet

General Description

AFN7412, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Description ( SOT-323 ) AFN7412 20V N-Channel Enhancement Mode MOSFET

Overview

Alfa-MOS Technology General.

Key Features

  • 20V/3.8A,RDS(ON)=52mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=56mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=68mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design.