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AFN7412 - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN7412, a member of the AFN7412-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN7412, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 20V/3.8A,RDS(ON)=52mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=56mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=68mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design.

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Datasheet Details

Part number AFN7412
Manufacturer Alfa-MOS
File Size 553.29 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN7412 Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN7412, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-323 ) AFN7412 20V N-Channel Enhancement Mode MOSFET Features 20V/3.8A,RDS(ON)=52mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=56mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=68mΩ@VGS=1.
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