AFN7472S mosfet equivalent, n-channel mosfet.
30V/15A,RDS(ON)=8.6mΩ@VGS=10V 30V/13A,RDS(ON)=14mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current cap.
Pin Description ( DFN3.3X3.3-8L )
AFN7472S
30V N-Channel Enhancement Mode MOSFET
Features
30V/15A,RDS(ON)=8.6mΩ@VGS=10.
AFN7472S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.
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