AFP1013E Datasheet - Alfa-MOS

P-Channel MOSFET

AFP1013E Features

* -20V/-0.6A, RDS(ON)= 800 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 950 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1250 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection ( >2KV ) Diode design

* in Low Battery Voltage Operation SOT-523 package design Applicat

AFP1013E General Description

AFP1013E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industria.

AFP1013E Datasheet (575.82 KB)

AFP1013E Datasheet Preview — Preview of AFP1013E PDF

Datasheet Details

Part number:

AFP1013E

Manufacturer:

Alfa-MOS

File Size:

575.82 KB

Description:

P-channel mosfet.

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AFP1013E P-Channel MOSFET Alfa-MOS

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AFP1013E Features

AFP1013E General Description

Datasheet Details

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Description:

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