Alfa-MOS AFP1023E
P-Channel MOSFET
GENERAL DESCRIPTION
AFP1013E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-563 ) AFP1023E 20V P-Channel Enhancement Mode MOSFETFEATURES
-20V/-0.6A, RDS(ON)= 800 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 950 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1250 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection Diode design–in Low Battery Voltage Operation SOT-523 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Smart Phones, Pagers Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Ordering Information Part Order