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AFP1013E - P-Channel MOSFET

Download the AFP1013E datasheet PDF. This datasheet also covers the AFP1013E-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP1013E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • -20V/-0.6A, RDS(ON)= 800 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 950 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1250 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection ( >2KV ) Diode design.
  • in Low Battery Voltage Operation SOT-523 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP1013E-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP1013E
Manufacturer Alfa-MOS
File Size 575.82 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP1013E Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP1013 P-Channel MOSFET
AFP1023 P-Channel MOSFET
AFP1023E P-Channel MOSFET
AFP1033 P-Channel MOSFET
AFP1033E P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP1013E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-523 ) AFP1013E 20V P-Channel Enhancement Mode MOSFET Features -20V/-0.6A, RDS(ON)= 800 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 950 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1250 mΩ@ VGS =-1.