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AFP1023E, AFP1023E-Alfa P-Channel MOSFET

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Description

Alfa-MOS Technology General .
AFP1013E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFP1023E, AFP1023E-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFP1023E, AFP1023E-Alfa
Manufacturer
Alfa-MOS
File Size
594.41 KB
Datasheet
AFP1023E-Alfa-MOS.pdf
Description
P-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: AFP1023E, AFP1023E-Alfa.
Please refer to the document for exact specifications by model.

Features

* -20V/-0.6A, RDS(ON)= 800 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 950 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1250 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection Diode design

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