AFP3401AS mosfet equivalent, p-channel mosfet.
-30V/-2.4 RDS(ON)=58mΩ@VGS=-10.0V -30V/-1.8 RDS(ON)=65mΩ@VGS=-4.5V -30V/-1.2 RDS(ON)=80mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) SOT-23 packa.
Pin Description ( SOT-23 )
AFP3401AS
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-2.4 RDS(ON)=58mΩ@VGS=-10.0V .
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