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AFP3407AS Datasheet P-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFP3407AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( SOT-23 ) AFP3407AS 30V P-Channel Enhancement Mode MOSFET

Key Features

  • z -30V/-2.8A,RDS(ON)=66mΩ@VGS=-10.0V z -30V/-2.4A,RDS(ON)=88mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z SOT-23 package design.

More Datasheets from Alfa-MOS

Part Number Description
AFP3401AS P-Channel MOSFET
AFP3401S P-Channel Enhancement Mode MOSFET
AFP3403A P-Channel MOSFET
AFP3405 P-Channel Enhancement Mode MOSFET
AFP3405AS P-Channel MOSFET
AFP3411 P-Channel MOSFET
AFP3413 P-Channel Enhancement Mode MOSFET
AFP3413A P-Channel MOSFET
AFP3415 P-Channel Enhancement Mode MOSFET
AFP3415EA P-Channel MOSFET

AFP3407AS Distributor