AFP3407AS Datasheet | Alfa-MOS

Alfa-MOS Technology General Description AFP3407AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) 30V P-Channel Enhancement Mode MOSFET Features z -30V/-2.8A,RDS(ON)=66mΩ@VGS=-10.0V z -30V/-2.4A,RDS(ON)=88mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z SOT-23 package design Application z Power Management in Note book z LED Display z DC-DC...