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AFP3407AS - P-Channel MOSFET

This page provides the datasheet information for the AFP3407AS, a member of the AFP3407AS-Alfa P-Channel MOSFET family.

Description

AFP3407AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z -30V/-2.8A,RDS(ON)=66mΩ@VGS=-10.0V z -30V/-2.4A,RDS(ON)=88mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z SOT-23 package design.

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Datasheet Details

Part number AFP3407AS
Manufacturer Alfa-MOS
File Size 342.73 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP3407AS Datasheet
Additional preview pages of the AFP3407AS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP3407AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP3407AS 30V P-Channel Enhancement Mode MOSFET Features z -30V/-2.8A,RDS(ON)=66mΩ@VGS=-10.0V z -30V/-2.4A,RDS(ON)=88mΩ@VGS=-4.
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