AFP3407AS mosfet equivalent, p-channel mosfet.
z -30V/-2.8A,RDS(ON)=66mΩ@VGS=-10.0V z -30V/-2.4A,RDS(ON)=88mΩ@VGS=-4.5V z Super high density cell design for extremely
low RDS (ON) z Exceptional on-resistance and maxim.
Pin Description ( SOT-23 )
AFP3407AS
30V P-Channel Enhancement Mode MOSFET
Features
z -30V/-2.8A,RDS(ON)=66mΩ@VGS=-10..
AFP3407AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.
Image gallery
Download