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AFP3447W - P-Channel MOSFET

Download the AFP3447W datasheet PDF. This datasheet also covers the AFP3447W-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP3447W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • -120V/-1.0A,RDS(ON)=1.5Ω@VGS=-10V -120V/-0.5A,RDS(ON)=1.7Ω@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection Design SOT-23-6L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP3447W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP3447W
Manufacturer Alfa-MOS
File Size 574.21 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP3447W Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP3401AS P-Channel MOSFET
AFP3401S P-Channel Enhancement Mode MOSFET
AFP3403A P-Channel MOSFET
AFP3405 P-Channel Enhancement Mode MOSFET
AFP3405AS P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP3447W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-6L ) AFP3447W 120V P-Channel Enhancement Mode MOSFET Features -120V/-1.0A,RDS(ON)=1.5Ω@VGS=-10V -120V/-0.5A,RDS(ON)=1.7Ω@VGS=-4.