AFP3447W mosfet equivalent, p-channel mosfet.
-120V/-1.0A,RDS(ON)=1.5Ω@VGS=-10V -120V/-0.5A,RDS(ON)=1.7Ω@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cu.
Pin Description ( SOT-23-6L )
AFP3447W
120V P-Channel Enhancement Mode MOSFET
Features
-120V/-1.0A,RDS(ON)=1.5Ω@VGS=-1.
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