AFP8452 Datasheet, Alfa-MOS

-30V/-5.0A,RDS(ON)=70mΩ@VGS=-10.0V -30V/-4.2A,RDS(ON)=90mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cu.

Pin Description ( SOT-223 ) AFP8452 30V P-Channel Enhancement Mode MOSFET Features -30V/-5.0A,RDS(ON)=70mΩ@VGS=-10.0V .