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AFP8434S - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP8434S, a member of the AFP8434S-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP8434S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -20V/-6.0A,RDS(ON)=50mΩ@VGS=4.5V -20V/-4.0A,RDS(ON)=67mΩ@VGS=2.5V -20V/-2.0A,RDS(ON)=90mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-223 package design.

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Datasheet preview – AFP8434S

Datasheet Details

Part number AFP8434S
Manufacturer Alfa-MOS
File Size 674.49 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP8434S Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP8434S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFP8434S 20V P-Channel Enhancement Mode MOSFET Features -20V/-6.0A,RDS(ON)=50mΩ@VGS=4.5V -20V/-4.0A,RDS(ON)=67mΩ@VGS=2.5V -20V/-2.0A,RDS(ON)=90mΩ@VGS=1.
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