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AFP8452 - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP8452, a member of the AFP8452-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP8452, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -30V/-5.0A,RDS(ON)=70mΩ@VGS=-10.0V -30V/-4.2A,RDS(ON)=90mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-223 package design.

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Datasheet preview – AFP8452

Datasheet Details

Part number AFP8452
Manufacturer Alfa-MOS
File Size 537.02 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP8452 Datasheet
Additional preview pages of the AFP8452 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP8452, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFP8452 30V P-Channel Enhancement Mode MOSFET Features -30V/-5.0A,RDS(ON)=70mΩ@VGS=-10.0V -30V/-4.2A,RDS(ON)=90mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-223 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.
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