AFP9575S mosfet equivalent, p-channel enhancement mode mosfet.
-60V/-18A,RDS(ON)= 68mΩ@VGS= -10V -60V/-12A,RDS(ON)= 78mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Backl.
Pin Description ( TO-252-2L )
AFP9575S
60V P-Channel Enhancement Mode MOSFET
Features
-60V/-18A,RDS(ON)= 68mΩ@VGS= -10.
AFP9575S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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