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AFP9510S - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP9510S, a member of the AFP9510S-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP9510S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -100/-8.0A,RDS(ON)= 200mΩ@VGS= -10V -100/-7.0A,RDS(ON)= 220mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Datasheet Details

Part number AFP9510S
Manufacturer Alfa-MOS
File Size 807.90 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP9510S Datasheet
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Alfa-MOS Technology General Description AFP9510S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP9510S 100 P-Channel Enhancement Mode MOSFET Features -100/-8.0A,RDS(ON)= 200mΩ@VGS= -10V -100/-7.0A,RDS(ON)= 220mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Switch DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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