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AFP9560S - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP9560S, a member of the AFP9560S-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP9560S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -40V/ -14A,RDS(ON)= 13mΩ@VGS= -10V -40V/ -12A,RDS(ON)= 18mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Datasheet Details

Part number AFP9560S
Manufacturer Alfa-MOS
File Size 799.51 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP9560S Datasheet
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Alfa-MOS Technology General Description AFP9560S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP9560S 40V P-Channel Enhancement Mode MOSFET Features -40V/ -14A,RDS(ON)= 13mΩ@VGS= -10V -40V/ -12A,RDS(ON)= 18mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Switch Load Switch in High Current Applications DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No.
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