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AFP9569 - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP9569, a member of the AFP9569-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP9569, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -40V/ -10A,RDS(ON)=100mΩ@VGS= -10V.
  • -40V/ -6A,RDS(ON)= 110mΩ@VGS= -4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TO-252-2L package design.

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Datasheet preview – AFP9569

Datasheet Details

Part number AFP9569
Manufacturer Alfa-MOS
File Size 568.82 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP9569 Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology mGeneral Description AFP9569, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP9569 40V P-Channel Enhancement Mode MOSFET Features  -40V/ -10A,RDS(ON)=100mΩ@VGS= -10V  -40V/ -6A,RDS(ON)= 110mΩ@VGS= -4.5V  Super high density cell design for extremely low RDS (ON)  TO-252-2L package design Application  Backlight Inverter for LCD Display  Full Bridge DC/DC Converter  LED Display  Load Switch  CCFL Inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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