AFP9569 Description
AFP9569, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP9569 40V P-Channel Enhancement Mode MOSFET.
AFP9569 Key Features
- 40V/ -10A,RDS(ON)=100mΩ@VGS= -10V
- 40V/ -6A,RDS(ON)= 110mΩ@VGS= -4.5V
- Super high density cell design for extremely
- TO-252-2L package design
- Backlight Inverter for LCD Display
- Full Bridge DC/DC Converter
- LED Display
- Load Switch
- CCFL Inverter