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AFP9569 Datasheet P-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology mGeneral.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFP9569, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( TO-252-2L ) AFP9569 40V P-Channel Enhancement Mode MOSFET

Key Features

  • -40V/ -10A,RDS(ON)=100mΩ@VGS= -10V.
  • -40V/ -6A,RDS(ON)= 110mΩ@VGS= -4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TO-252-2L package design.

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