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AFP9565S - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP9565S, a member of the AFP9565S-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP9565S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -40V/ -8.6A,RDS(ON)= 58mΩ@VGS= -10V -40V/ -6.2A,RDS(ON)= 86mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Datasheet Details

Part number AFP9565S
Manufacturer Alfa-MOS
File Size 821.34 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP9565S Datasheet
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Alfa-MOS Technology General Description AFP9565S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP9565S 40V P-Channel Enhancement Mode MOSFET Features -40V/ -8.6A,RDS(ON)= 58mΩ@VGS= -10V -40V/ -6.2A,RDS(ON)= 86mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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