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2SC4467
Application : Audio and General Purpose
(Ta=25°C) 2SC4467 10max 10max 120min 50min∗ 1.5max 20typ 200typ V pF
20.0min 4.0max
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4467 160 120 6 8 3 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=160V VEB=6V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
19.9±0.3
4.0
V
a b
ø3.2±0.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
O(50 to100), P(70 to140), Y(90 to180)
5.45±0.
C4467 Datasheet
