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AS4C14405 - (AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO)

Download the AS4C14405 datasheet PDF. This datasheet also covers the AS4C14400 variant, as both devices belong to the same (as4c14400 / as4c14405) 1m-bit x 4 cmos dram (fast page mode or edo) family and are provided as variant models within a single manufacturer datasheet.

Description

26 25 24 23 22 GND I/O3 I/O2 CAS OE I/O0 I/O1 WE RAS A9 1 2 3 4 5 26 25 24 23 22 GND I/O3 I/O2 CAS OE Address inputs Input/output Row address strobe Output enable I/O0 to I/O3 CAS WE VCC 18 17 16 15 14 A8 A7 A6 A5 A4 A0 A1 A2 A3 VCC 9 10 11 12 13 18 17 16 15 14 A8 A7 A6 A5 A4 Column

Features

  • Organization: 1,048,576 words × 4 bits.
  • High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time.
  • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh.
  • Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O.
  • Fast page mode (AS4C14400) or EDO (AS4C14405) Pin arrangement SOJ I/O0 I/O1 WE RAS A9 1 2 3 4 5 A0 A1 A2 A3 VCC 9 10 11 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AS4C14400_AllianceSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AS4C14405
Manufacturer Alliance Semiconductor
File Size 398.47 KB
Description (AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO)
Datasheet download datasheet AS4C14405 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Performance 1M×4 CMOS DRAM AS4C14400 AS4C14405 ® 1M-bit × 4 CMOS DRAM (Fast page mode or EDO) Preliminary information Features • Organization: 1,048,576 words × 4 bits • High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh • Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O • Fast page mode (AS4C14400) or EDO (AS4C14405) Pin arrangement SOJ I/O0 I/O1 WE RAS A9 1 2 3 4 5 A0 A1 A2 A3 VCC 9 10 11 12 13 Selection guide Maximum RAS access time Maximum CAS access time Maximum column address access time m o .c U 4 t e e h S a t a .
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